Scientific paper ID 2031 : 2020/3
SELECTION OF TRANSITORS FOR SWITCHING ELEMENT IN ELECTRIC MOTOR INVERTER (SI MOSFET, SIC MOSFET) FROM THE POINT OF VIEW OF ENERGY EFFICIENCY
Yaroslav Stefanov, Ivan Milenov
The report considers the choice of transistors for a motor regulator in terms of parameters that improve its performance. The parameters of SI MOSFET and SIC MOSFET and their influence on the properties of the inverter are compared. The power losses from conductivity P_con and at switching P_sw, as well as their dependence on the resistance in the on state R_(ds(on)) and the input and output capacitances C_iss C_osson the transistors are considered. We can see the advantages of using SIC MOSFET transistors in inverters for electric vehicles - reducing their size and weight, reducing consumption and increasing mileage. The high temperature limits of SIC transistors give them an advantage when used in inverters of electric vehicles. The high switching frequency reduces the losses of heat dissipation and increases the energy efficiency of inverters using SIC transistors. The high switching frequency reduces heat dissipation losses and increases the energy efficiency of inverters using SIC transistors. The small power losses reduce the heat output and allow the reduction of the dimensions of the radiators of the key elements and thus increase the installation density and reduce the volume and weight of the inverters using silicon carbide transistors.
Transistors MOSFET Si SiCTransistors MOSFET Si SiCYaroslav Stefanov Ivan Milenov
 Skinner Dave Improving energy efficieniy in industrial applications with silicon carbide, CREE 2019.
 Xiaofeng Ding, Min Du, Tong Zhou, Hong Guo, Chengming Zhang, Feida Chen Comprehensive comparison between sic-mosfets and si-igbt based electric vehicle traction systems under low speed and light load, CUE2015App1ied energy symposium and summit 2015: Low carbon cities and urban energy systems.
 Stefanov Yaroslav, Milenov Ivan. Sravnenie i otsenka na parametrite na MOSFET tranzistori na silitsiev karbid i silitsiy, XXIV Mezhdunarodna nauchna konferentsiya “Transport 2019”, Borovets, hotel “Samokov”, 3-5 oktomvri 2019 g.
(  Стефанов Ярослав, Миленов Иван. Сравнение и оценка на параметрите на MOSFET транзистори на силициев карбид и силиций, XXIV Международна научна конференция “Транспорт 2019”, Боровец, хотел “Самоков”, 3-5 октомври 2019 г. )
 IXIS Corporation 2008, IXFK52N100X Preliminary Technical Information
 CREE Inc. 2014, C2M0025120D Silicon Carbide Power MOSFET